Providence, RI, United States of America

Arto V Nurimikko

This inventor holds 1 USPTO granted patent. Top assignee: Research Corporation Technologies, Inc.. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Arto V Nurimikko. Retrieved from https://idiyas.com/inventor/arto-v-nurimikko

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Arto V Nurimikko: Innovator in Semiconductor Technology

Introduction

Arto V Nurimikko is a prominent inventor based in Providence, RI (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of light-emitting devices. His innovative work has led to the creation of a patent that showcases his expertise and creativity in this area.

Latest Patents

Arto V Nurimikko holds a patent for "Group II-VI compound semiconductor light emitting devices." This invention includes at least one II-VI quantum well region of a well layer disposed between first and second barrier layers. The quantum well region is sandwiched between first and second cladding layers of a II-VI semiconductor material. The first cladding layer is formed on and lattice matched to the first barrier layer and to a substrate of a III-V compound semiconductor material. The second cladding layer is lattice matched to the second barrier layer. The quantum well layer comprises a II-VI compound semiconductor material having the formula A.sub.x B.sub.(1-x) C, where A and B are two different elements from Group II, and C is at least one element from Group VI. When the second cladding layer has a p-type conductivity, a graded bandgap ohmic contact can be utilized. This contact can be a single continuously graded II-VI p-type region or a plurality of cells, each having first and second thin layers of first and second p-type II-VI semiconductor materials respectively. Another embodiment of the invention discloses a monolithic multicolor light emitting element capable of emitting four colors and a method for fabricating the same. The monolithic multicolor element includes four II-VI semiconductor light emitting devices formed on a single III-V substrate.

Career Highlights

Arto V Nurimikko is associated with Research Corporation Technologies, Inc., where he continues to push the boundaries of semiconductor technology. His work has not only advanced the field but has also paved the way for future innovations in light-emitting devices.

Collaborations

Throughout his career, Arto has collaborated with notable colleagues, including Jung Han and Robert L Gunshor. These partnerships have contributed to the success of his projects and the advancement of semiconductor technology.

Conclusion

Arto V Nurimikko is a distinguished inventor whose work in semiconductor technology has led to significant advancements in light

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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