Arthur D Herbig

Title: Arthur D. Herbig: Innovator in Semiconductor Technology

Introduction

Arthur D. Herbig is a notable inventor based in San Jose, California, recognized for his contributions to semiconductor technology. With a total of two patents to his name, he has made significant advancements in the field, particularly in the area of field-effect transistors and gallium arsenide layers.

Latest Patents

Herbig's latest patents include innovative processes that enhance semiconductor performance. One of his patents focuses on subchannel doping to reduce short-gate effects in field-effect transistors. This process involves forming a P-type region on a semiconductor substrate, followed by the epitaxial growth of an N-type layer. The design of the Schottky gate and the arrangement of the epitaxial layer components are crucial in preventing short channel effects that can arise during operation. Another patent details a process for epitaxially growing a gallium arsenide layer with reduced contaminants. This method utilizes a specific ratio of hydrogen chloride to ensure a clean substrate surface while promoting the growth of gallium arsenide.

Career Highlights

Throughout his career, Arthur D. Herbig has worked with prominent companies in the technology sector, including Microwave Technology, Inc. and TRW Limited. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Herbig has collaborated with notable colleagues such as Edward Bryant Stoneham and Masahiro Omori, contributing to a rich exchange of ideas and advancements in their field.

Conclusion

Arthur D. Herbig's work in semiconductor technology has led to significant innovations that enhance the performance and reliability of electronic devices. His patents reflect a deep understanding of the complexities involved in semiconductor fabrication, making him a valuable contributor to the industry.