Arthur Ang

Title: Arthur Ang: Innovator in Semiconductor Technology

Introduction

Arthur Ang is a prominent inventor based in Singapore, known for his contributions to semiconductor technology. With a total of 5 patents, he has made significant advancements in the field, particularly in the fabrication of integrated circuits.

Latest Patents

One of his latest patents is a method of cobalt silicidation using an oxide-titanium interlayer. This innovative method describes the formation of a high-quality cobalt disilicide film essential for integrated circuit manufacturing. The process involves providing a semiconductor substrate with silicon regions, growing a thermal oxide layer, and depositing titanium and cobalt layers. Following a series of rapid thermal anneals, the cobalt is transformed into cobalt disilicide, completing the film formation. Another notable patent is the intermetal dielectric layer for integrated circuits. This structure features a premetal dielectric and metal lines, designed to prevent fluorine attack while maintaining a stable dielectric layer with reduced out-gassing.

Career Highlights

Arthur Ang has worked with Chartered Semiconductor Manufacturing Ltd, where he applied his expertise in semiconductor fabrication. His work has contributed to the development of advanced technologies that enhance the performance and reliability of integrated circuits.

Collaborations

Throughout his career, Arthur has collaborated with notable professionals in the industry, including Peter Chew and Chung Woh Lai. These collaborations have further enriched his contributions to semiconductor technology.

Conclusion

Arthur Ang's innovative work in semiconductor technology has led to significant advancements in integrated circuit fabrication. His patents reflect a commitment to improving the efficiency and quality of semiconductor manufacturing processes.