Arpan K Deb

Title: Arpan K Deb: Innovator in Phase Change Memory Technology

Introduction

Arpan K Deb is a notable inventor based in Uttar Pradesh, India. He has made significant contributions to the field of phase change memory technology, holding a total of 4 patents. His work focuses on enhancing the performance and reliability of access devices used in memory applications.

Latest Patents

One of his latest patents is for tunable voltage margin access diodes. This invention relates to high current density access devices (ADs) and outlines a structure and method for forming these diodes in phase change memory (PCM) blocks. The invention utilizes layers of copper-containing mixed ionic-electronic conduction (MIEC) materials. By varying the deposition technique and the amount of MIEC material used, the voltage margin of the access device can be tuned to meet specific operating conditions of different memory devices. This innovation allows for the fabrication of access devices that can supply high current densities while operating reliably at temperatures compatible with standard back-end-of-line (BEOL) processing.

Career Highlights

Arpan K Deb is currently employed at International Business Machines Corporation (IBM), where he continues to develop cutting-edge technologies in the field of memory devices. His expertise in high current density access devices has positioned him as a key player in advancing memory technology.

Collaborations

Some of his notable coworkers include Mohit Bajaj and Aniruddha Konar, who collaborate with him on various projects within the company.

Conclusion

Arpan K Deb's innovative work in phase change memory technology and his contributions to the development of tunable voltage margin access diodes highlight his importance in the field. His patents reflect a commitment to enhancing memory device performance and reliability.