Cusano Milanino, Italy

Armando Conci


Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2000

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1 patent (USPTO):Explore Patents

Title: Armando Conci: Innovator in Memory Device Recovery

Introduction

Armando Conci is a notable inventor based in Cusano Milanino, Italy. He has made significant contributions to the field of memory devices, particularly in the recovery of faulty non-volatile memories. His innovative approach has the potential to enhance the reliability and functionality of semiconductor memory devices.

Latest Patents

Armando Conci holds a patent for a "Method for recovering failed memory devices." This invention relates to a method of recovering faulty non-volatile memories. The method can be applied to an electrically programmable semiconductor non-volatile memory device set up as a multi-sector memory matrix. It includes selection circuitry for selecting words or individual bytes of the memory. According to this method, the memory matrix is addressed by byte, rather than by memory word, by selection circuitry whenever the device fails an operation test. The use of a Hamming code for error correction to remedy malfunctions due to manufacture allows the method to be applied to those devices that fail their test and would otherwise be treated as rejects. He has 1 patent to his name.

Career Highlights

Armando Conci is associated with Sgs-thomson Microelectronics S.r.l., where he has been able to apply his expertise in memory technology. His work has contributed to advancements in the field, particularly in improving the performance and reliability of memory devices.

Collaborations

Armando has collaborated with notable colleagues such as Maurizio Branchetti and Carla Maris Golla. Their combined efforts have fostered innovation and development in memory technology.

Conclusion

Armando Conci's contributions to the field of memory device recovery highlight his innovative spirit and dedication to advancing technology. His work not only addresses current challenges in memory devices but also paves the way for future advancements in the industry.

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