Singapore, Singapore

Ariando

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: National University of Singapore. Active years: 2016.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ariando. Retrieved from https://idiyas.com/inventor/ariando

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: Ariando - Innovator in Graphene Technology

Introduction

Ariando is a prominent inventor based in Singapore, known for his contributions to the field of graphene technology. He has developed innovative solutions that enhance the properties of graphene, a material with significant potential in various applications.

Latest Patents

Ariando holds a patent titled "Hole doping of graphene." This invention involves a layer of graphene with a first work function, paired with a metal oxide film that has a second work function greater than the first. The process allows for the transfer of electrons from the graphene layer to the metal oxide film, resulting in the formation of a hole accumulation layer within the graphene. This advancement has implications for improving the performance of electronic devices.

Career Highlights

Ariando is affiliated with the National University of Singapore, where he conducts research and develops new technologies. His work has garnered attention in the scientific community, contributing to the advancement of materials science and engineering.

Collaborations

Ariando collaborates with notable colleagues, including Lanfei Xie and Xiao Wang. Their combined expertise fosters a dynamic research environment that drives innovation in graphene applications.

Conclusion

Ariando's work in graphene technology exemplifies the potential of innovative materials in modern science. His contributions continue to pave the way for advancements in electronic applications and materials research.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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