Anze Mraz

Title: Anze Mraz: Innovator in Memory Device Technology

Introduction

Anze Mraz is a notable inventor based in Ljubljana, Slovenia. He has made significant contributions to the field of memory devices, particularly through his innovative patent that combines advanced materials for improved functionality.

Latest Patents

Anze Mraz holds a patent for a "Memory device and method for its operation." This invention describes a memory device that integrates a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element consists of an active material that can switch between two distinct values of electrical resistivity at the same temperature. The superconductor element is designed to switch from a superconducting state to a non-superconducting state, allowing for current injection through the resistive element, which can then toggle between the two resistivity values.

Career Highlights

Throughout his career, Anze Mraz has worked with esteemed organizations such as the Center of Excellence on Nanoscience and Nanotechnology and the Jozef Stefan Institute. His work in these institutions has allowed him to explore and develop cutting-edge technologies in the field of nanoscience.

Collaborations

Anze Mraz has collaborated with notable colleagues, including Dragan Mihailovic and Damjan Svetin. These partnerships have contributed to the advancement of research and innovation in memory device technology.

Conclusion

Anze Mraz is a pioneering inventor whose work in memory devices showcases the potential of combining resistive and superconductive elements. His contributions to the field are significant and continue to influence advancements in technology.