The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 12, 2023

Filed:

Nov. 14, 2019
Applicants:

Jozef Stefan Institute, Ljubljana, SI;

Center of Excellence on Nanoscience and Nanotechnology—nanocenter, Ljubljana, Ljubljana, SI;

Inventors:

Dragan Mihailovic, Ljubljana, SI;

Damjan Svetin, Ljubljana, SI;

Anze Mraz, Ljubljana, SI;

Rok Venturini, Ljubljana, SI;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/44 (2006.01); H10N 60/30 (2023.01); H10N 70/20 (2023.01); B82Y 10/00 (2011.01); B82Y 25/00 (2011.01);
U.S. Cl.
CPC ...
G11C 11/44 (2013.01); H10N 60/30 (2023.02); H10N 70/253 (2023.02); B82Y 10/00 (2013.01); B82Y 25/00 (2013.01);
Abstract

The invention describes a memory device which combines a switchable resistive element and a superconductor element electrically in parallel. The switchable resistive element comprises an active material, which is switchable between first and second values of electrical resistivity ρand ρat the same temperature, wherein ρis different to ρ. The superconductor element is operable so that at least part of the superconductor element is switchable from a superconducting state to a non-superconducting state. When the superconductor element is switched from the superconducting state to the non-superconducting state, a current injection is provided through the switchable resistive element capable of switching the switchable resistive element between said first and second values of electrical resistivity.


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