Company Filing History:
Years Active: 2018-2019
Title: Anxing Shen: Innovator in Flash Memory Technology
Introduction
Anxing Shen is a prominent inventor based in Shanghai, China, known for his contributions to the field of semiconductor technology, particularly in flash memory units. With a total of two patents to his name, Shen has made significant advancements that enhance the efficiency and performance of flash memory devices.
Latest Patents
Shen's latest patents include a "Method for forming flash memory unit" and a "Method for operating flash memory." The first patent outlines a process for forming flash memory units by separating logic gates in select gate PMOS transistor areas from those in control gate PMOS transistor areas. This innovative method allows for the diffusion of P-type impurities into an N-type floating gate polysilicon layer, converting it into a P-type floating gate. This process enables the successful formation of select gate PMOS transistors with a small surface channel threshold value in a 55 nm process, facilitating mass production. The second patent describes a method for operating flash memory that significantly reduces power consumption during read operations. By switching the potential of a control line from a positive supply voltage to 0V, the need for negative voltage switching is eliminated, leading to improved reading speed and accuracy.
Career Highlights
Anxing Shen is currently employed at Integrated Silicon Solution (Shanghai), Inc., where he continues to develop innovative solutions in semiconductor technology. His work has been instrumental in advancing the capabilities of flash memory devices, making them more efficient and reliable.
Collaborations
Shen collaborates with notable colleagues in the field, including Chih-Kuang Lin and Jianhui Xie. Their combined expertise contributes to the ongoing development of cutting-edge technologies in the semiconductor industry.
Conclusion
Anxing Shen's contributions to flash memory technology exemplify the impact of innovative thinking in the semiconductor field. His patents reflect a commitment to enhancing device performance and efficiency, solidifying his reputation as a leading inventor in this domain.