Anuja Desilva

Title: Anuja Desilva: Innovator in Photolithography Technology

Introduction

Anuja Desilva is a prominent inventor based in Slingerlands, NY (US). She has made significant contributions to the field of photolithography, particularly in the development of advanced materials and methods for semiconductor manufacturing. With a total of 3 patents to her name, her work is recognized for its innovative approach and technical depth.

Latest Patents

One of Anuja's latest patents is focused on a resist having a tuned interface hardmask layer for extreme ultraviolet (EUV) exposure. This method involves preparing a substrate for photolithography by forming an underlayer over the substrate's surface. It includes depositing an interface hardmask layer on the underlayer using either a vapor phase deposition process or an atomic layer deposition process. Furthermore, a layer of EUV resist is formed on the interface hardmask layer, which is composed of material specifically tuned to achieve a certain secondary electron yield. This patent also discloses a structure configured for photolithography, which includes a substrate, an underlayer, an interface hardmask layer, and a layer of EUV resist.

Career Highlights

Anuja Desilva is currently employed at International Business Machines Corporation (IBM), where she continues to push the boundaries of innovation in her field. Her work has been instrumental in enhancing the efficiency and effectiveness of photolithography processes, which are critical in semiconductor manufacturing.

Collaborations

Anuja has collaborated with notable colleagues, including Michael P. Belyansky and Ravi K. Bonam. These collaborations have fostered a dynamic exchange of ideas and expertise, further enriching her contributions to the field.

Conclusion

Anuja Desilva stands out as a leading inventor in the realm of photolithography technology. Her innovative patents and collaborative efforts at IBM highlight her commitment to advancing semiconductor manufacturing processes.