Los Altos, CA, United States of America

Antony G Bell

This inventor holds 1 USPTO granted patent. Top assignee: Logic Devices Incorporated. Active years: 1990.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Antony G Bell. Retrieved from https://idiyas.com/inventor/antony-g-bell-px3265d9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 1.0

ph-index = 1

Forward Citations = 23(Granted Patents)


Company Filing History:


Years Active: 1990

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1 patent (USPTO):Explore Patents

Title: Innovations of Antony G Bell

Introduction

Antony G Bell is a notable inventor based in Los Altos, California. He has made significant contributions to the field of semiconductor memory technology. His work focuses on improving the efficiency and reliability of static random access memory (SRAM).

Latest Patents

Antony G Bell holds a patent for a static semiconductor memory with improved write recovery. This innovation addresses the challenges associated with access time and inadvertent writing operations in SRAM. The patent describes a system where switching circuits, or multiplexers, are utilized to connect column bit lines with reading and writing circuits. These circuits are divided into separate components for read and write operations. A recovery pulse is applied only to the bit lines of a column that has just been written to, enhancing the overall performance of the memory system.

Career Highlights

Antony G Bell is associated with Logic Devices Incorporated, where he continues to develop innovative solutions in semiconductor technology. His expertise in SRAM design has positioned him as a key figure in the industry. With a focus on reducing access times and improving memory reliability, he has contributed to advancements that benefit various applications in computing.

Collaborations

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Conclusion

Antony G Bell's contributions to semiconductor memory technology exemplify the impact of innovation in the field. His patent for improved SRAM design showcases his commitment to enhancing memory performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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