Fresnes, France

Antonio Tejeda Gala

This inventor holds 1 USPTO granted patent. Top assignee: Commissariat a L'energie Atomique Et Aux Energies Alternatives. Active years: 2014.


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Antonio Tejeda Gala: Innovator in Graphene Technology

Introduction

Antonio Tejeda Gala is a prominent inventor based in Fresnes, France. He has made significant contributions to the field of materials science, particularly in the development of graphene technologies. His innovative work has garnered attention in both academic and industrial circles.

Latest Patents

Antonio holds a patent for a method of manufacturing a modified structure comprising a semiconducting modified graphene layer on a substrate. This patent, titled "Graphene epitaxied on SiC, with an open band gap and mobility comparable to standard graphene with zero band gap," showcases his expertise in creating advanced materials with unique properties. He has 1 patent to his name, reflecting his commitment to innovation in this cutting-edge field.

Career Highlights

Antonio is affiliated with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, a leading research institution in France. His work there focuses on the synthesis and application of graphene, which has the potential to revolutionize various industries, including electronics and energy storage.

Collaborations

Throughout his career, Antonio has collaborated with notable colleagues, including Hanna Enriquez and Hamid Oughaddou. These partnerships have allowed him to expand his research and contribute to groundbreaking advancements in graphene technology.

Conclusion

Antonio Tejeda Gala is a key figure in the field of graphene research, with a focus on innovative manufacturing methods. His contributions continue to shape the future of materials science and technology.

Profile summary based on public USPTO records.
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