Antonio L P Rotondaro

Title: Antonio L P Rotondaro: Innovator in Semiconductor Technology

Introduction

Antonio L P Rotondaro is a notable inventor based in Wappingers Falls, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing the performance of transistors, which are crucial components in modern electronic devices.

Latest Patents

One of his latest patents is for a body contacted transistor with reduced parasitic capacitance. This innovation involves a body contacted semiconductor-on-insulator (SOI) metal gate containing a transistor that minimizes parasitic gate capacitance. The design includes the removal of a metal portion of a gate stack over the body contact region, allowing a silicon-containing material to form a connection with the gate dielectric in the body contact region of an SOI substrate. This modification increases the effective gate dielectric thickness in the body contact region by more than 5 angstroms (Å), resulting in lower parasitic capacitance.

Career Highlights

Antonio is currently employed at International Business Machines Corporation (IBM), where he continues to develop cutting-edge technologies. His work at IBM has positioned him as a key player in the advancement of semiconductor devices.

Collaborations

Throughout his career, Antonio has collaborated with talented individuals such as Zhengwen O Li and Mark R Visokay. These partnerships have contributed to the successful development of his innovative patents.

Conclusion

Antonio L P Rotondaro is a distinguished inventor whose work in semiconductor technology has led to significant advancements in transistor design. His contributions continue to impact the electronics industry positively.