The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 23, 2016
Filed:
Mar. 14, 2012
Applicant:
Antonio L. P. Rotondaro, Wappingers Falls, NY (US);
Inventor:
Antonio L. P. Rotondaro, Wappingers Falls, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/49 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42384 (2013.01); H01L 29/4908 (2013.01); H01L 29/78615 (2013.01);
Abstract
A body contacted semiconductor-on-insulator (SOI) metal gate containing transistor that has a reduced parasitic gate capacitance is provided in which a metal portion of a gate stack is removed over the body contact region and a silicon-containing material is formed that contacts the gate dielectric in the body contact region of an SOI substrate. This causes an increase of the effective gate dielectric thickness on the body contact region by greater than 5 angstroms (Å). This results in a lower parasitic capacitance at the body contact region.