Penicuik, United Kingdom

Anthony J Snell

This inventor holds 2 USPTO granted patents. Top assignees: British Telecommunications Corporation, British Telecommunications Public Limited Company. Active years: 1994-1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anthony J Snell. Retrieved from https://idiyas.com/inventor/anthony-j-snell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.5

ph-index = 2

Forward Citations = 390(Granted Patents)


Location History:

  • Penicuik, GB (1994)
  • Midlothian, GB (1996)

Company Filing History:


Years Active: 1994-1996

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2 patents (USPTO):Explore Patents

Title: The Innovations of Anthony J Snell

Introduction

Anthony J Snell is a notable inventor based in Penicuik, GB. He has made significant contributions to the field of technology, particularly in memory elements. With a total of 2 patents to his name, Snell's work has had a lasting impact on the industry.

Latest Patents

Among his latest patents are the "Resistive Memory Element" and "Amorphous Silicon Memory." These innovations showcase his expertise in developing advanced memory technologies that are crucial for modern computing.

Career Highlights

Throughout his career, Snell has worked with prominent companies such as British Telecommunications Public Limited Company and British Telecommunications Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking projects.

Collaborations

Snell has collaborated with notable individuals in the field, including Alan E Owen and Janos Hajto. These partnerships have further enriched his work and expanded the scope of his inventions.

Conclusion

Anthony J Snell's contributions to technology through his patents and collaborations highlight his role as an influential inventor. His work continues to inspire advancements in memory technology and beyond.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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