Anthony J Dally

Title: The Innovations of Anthony J Dally

Introduction

Anthony J Dally is a notable inventor based in Boise, ID (US), recognized for his contributions to semiconductor technology. He holds a total of five patents, showcasing his expertise and innovative spirit in the field.

Latest Patents

One of his latest patents is the "Intrinsic dual gate oxide MOSFET using a damascene gate process." This invention involves a method that includes forming a mask with an opening on a structure, implanting an inhibiting species through the opening to create an inhibiting region, and growing a dielectric layer on the structure. The inhibiting region partially inhibits the growth of the dielectric layer, allowing for the formation of a semiconductor structure, such as a MOSFET or anti-fuse, which includes a dual thickness dielectric layer. Alternatively, the dual thickness dielectric can be formed by using a dielectric growth enhancement species that aids in the growth of the dielectric layer.

Career Highlights

Anthony J Dally is currently employed at International Business Machines Corporation (IBM), where he continues to innovate and develop new technologies. His work has significantly impacted the semiconductor industry, particularly in the design and fabrication of advanced electronic components.

Collaborations

Throughout his career, Dally has collaborated with talented individuals such as Seiki Ogura and Jacob Riseman. These collaborations have contributed to the advancement of technology and the successful development of various projects.

Conclusion

Anthony J Dally's contributions to the field of semiconductor technology through his patents and collaborations highlight his role as a significant inventor. His work continues to influence the industry and pave the way for future innovations.