Kyoto, Japan

Anqi Ji

This inventor holds 1 USPTO granted patent and 1 EPO patent. Top assignee: Kyoto University. Active years: 2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Anqi Ji. Retrieved from https://idiyas.com/inventor/anqi-ji

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Anqi Ji: Innovator in Thermal Radiation Light Sources

Introduction

Anqi Ji is a prominent inventor based in Kyoto, Japan. She has made significant contributions to the field of thermal radiation light sources. Her innovative work has led to the development of a unique patent that showcases her expertise and creativity.

Latest Patents

Anqi Ji holds a patent for a thermal radiation light source. This invention includes a laminated body consisting of multiple quantum layers, with an n-layer and a p-layer sandwiching the quantum layers. The n-layer is made of an n-type semiconductor, while the p-layer is made of a p-type semiconductor. The invention also features a voltage applying unit connected to the n-layer and p-layer, which facilitates the movement of charges. Additionally, a voltage switching unit controls the application of voltage to the quantum layers, and a photonic crystal portion is included to resonate lights of multiple wavelengths.

Career Highlights

Anqi Ji is affiliated with Kyoto University, where she continues to advance her research and innovation in the field of light sources. Her work has garnered attention for its potential applications in various technologies.

Collaborations

Throughout her career, Anqi Ji has collaborated with esteemed colleagues, including Susumu Noda and Takuya Inoue. These collaborations have enriched her research and contributed to the development of her patented technologies.

Conclusion

Anqi Ji is a

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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