Annie Xia

Title: The Innovations of Annie Xia

Introduction

Annie Xia is a prominent inventor based in Lynnfield, MA (US). She has made significant contributions to the field of technology, particularly in the area of plasma processing and etching techniques. With a total of two patents to her name, her work has had a notable impact on the industry.

Latest Patents

Annie Xia's latest patents include a method and system for forming a feature in a high-k layer. This innovative method involves plasma processing a high-k layer on a substrate holder within a process chamber. The process creates a plasma that exposes the high-k layer, while RF power is applied to reduce the formation rate of an oxide interface layer. The resulting device features an etched high-k layer with a reduced bird's beak profile, ensuring that the substrate surface in the etched region is coplanar with the non-etched area.

Another significant patent is her method and system for etching a film stack. This method describes the preparation of a film stack and the formation of features using multiple dry etching processes. The features created can include a gate structure with a critical dimension of approximately 25 nm or less, achieved through the use of four mask layers.

Career Highlights

Annie Xia has worked with notable companies such as Tokyo Electron Limited and IBM. Her experience in these organizations has allowed her to refine her skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Annie has collaborated with talented individuals, including Hiromasa Mochiki and Arpan Pravin Mahorowala. These partnerships have fostered innovation and have been instrumental in her research and development efforts.

Conclusion

Annie Xia's contributions to the field of technology through her patents and collaborations highlight her role as a leading inventor. Her innovative methods in plasma processing and etching continue to influence advancements in the industry.