Annie Baudrant

Title: The Innovations of Annie Baudrant

Introduction

Annie Baudrant is a notable inventor based in St. Martin d'Heres, France. She has made significant contributions to the field of integrated circuits, holding a total of 3 patents. Her work has advanced the technology behind MOS transistors and integrated circuit devices.

Latest Patents

Annie's latest patents include a method of fabrication of MOS transistors that feature metallic electrodes. Additionally, she has developed an integrated circuit device that incorporates a continuous layer, which enhances the performance and reliability of the circuits. One of her inventions concerns an integrated circuit where the monocrystalline or polycrystalline silicon zones of the source, gate, and drain are covered with tantalum silicide (TaSi₂). The remainder of the slice is covered with portions of a layer of tantalum oxide (Ta₂O₅), particularly on the sides of the grids of polycrystalline silicon and on the thick oxide. An aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.

Career Highlights

Throughout her career, Annie has worked with various companies, including Société pour l'Étude et la Fabrication de Circuits Intégrés Spéciaux (EFCS) and Société pour l'Étude et la Fabrication de Circuits Intégrés Spéciaux. Her expertise in integrated circuit technology has made her a valuable asset in the industry.

Collaborations

Annie has collaborated with notable professionals in her field, including Michel Marty and Alain Y Roche. Their combined efforts have contributed to the advancement of integrated circuit technology.

Conclusion

Annie Baudrant's innovative work in the field of integrated circuits and her numerous patents highlight her significant contributions to technology. Her inventions continue to influence the development of modern electronic devices.