Societe Pour L'etude Et La Fabrication De Circuits Integres Speciaux

Societe Pour D'etude Et La Fabrication De Circuits Integres Speciaux Efcs

Societe Pour D'etude Et La Fabrication De Circuits Integres Speciaux

Annie Baudrant

Michel Marty

Alain Y Roche

Joseph Borel

Method of fabrication of MOS transistors having electrodes of metallic

The invention concerns an integrated circuit the monocrystalline or polycrystalline silicon zones of which the source, gate and drain are covered with tantalum silicide TaSi.sub.2 while the remainder of the slice is covered with portions of a layer of tantalum oxide Ta.sub.2 O.sub.5, especially on the sides of the grids of polycrystalline silicon and on the thick oxide and an aluminum alloy layer comes into contact with the tantalum silicide to form connections with the portions of tantalum silicide.

Integrated circuit device which includes a continous layer which

Process for manufacturing an integrated circuit with tantalum silicide

Growing community of inventors

St. Martin d'Heres, France

Annie Baudrant