Knoxville, TN, United States of America

Annettee E Farah


Average Co-Inventor Count = 9.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Annettee E Farah: Innovator in Semiconductor Technology

Introduction

Annettee E Farah is a prominent inventor based in Knoxville, TN (US). She has made significant contributions to the field of semiconductor technology, showcasing her expertise through her innovative patents.

Latest Patents

One of her notable patents is for a semiconductor composition containing iron, dysprosium, and terbium. This amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, and 15 to 35 atomic percent terbium, with the balance being at least one of an oxidizing element and a reducing element. The composition is characterized by an essentially amorphous microstructure, an optical transmittance of at least 50% in the visible spectrum, and semiconductor electrical properties.

Career Highlights

Annettee E Farah is associated with UT-Battelle, Inc., where she continues to push the boundaries of semiconductor research and development. Her work has garnered attention for its potential applications in various technological fields.

Collaborations

She has collaborated with notable colleagues, including Raphael C Pooser and Benjamin J Lawrie, contributing to a dynamic research environment that fosters innovation.

Conclusion

Annettee E Farah's contributions to semiconductor technology exemplify her role as a leading inventor in her field. Her innovative work continues to influence advancements in technology and materials science.

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