The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 26, 2017

Filed:

Jun. 28, 2016
Applicants:

Ut-battelle, Llc, Oak Ridge, TN (US);

University of Tennessee Research Foundation, Knoxville, TN (US);

Inventors:

Raphael C. Pooser, Knoxville, TN (US);

Benjamin J. Lawrie, Oak Ridge, TN (US);

Arthur P. Baddorf, Knoxville, TN (US);

Abhinav Malasi, Knoxville, TN (US);

Humaira Taz, Knoxville, TN (US);

Annettee E. Farah, Knoxville, TN (US);

Ramakrishnan Kalyanaraman, Knoxville, TN (US);

Gerd Josef Mansfred Duscher, Knoxville, TN (US);

Maulik K. Patel, Knoxville, TN (US);

Assignee:

UT-Battelle, LLC, Oak Ridge, TN (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
C03C 4/00 (2006.01); H01L 29/24 (2006.01); H01L 29/786 (2006.01); C03C 3/12 (2006.01); C03C 17/02 (2006.01); C23C 14/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/247 (2013.01); C03C 3/12 (2013.01); C03C 4/00 (2013.01); C03C 17/02 (2013.01); C23C 14/08 (2013.01); H01L 29/786 (2013.01);
Abstract

An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.


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