Anne-Marie Lamouroux

Title: The Innovative Contributions of Anne-Marie Lamouroux

Introduction

Anne-Marie Lamouroux is a notable inventor based in Prades, France. She has made significant contributions to the field of semiconductor technology. Her work focuses on improving the performance of resistors, which are crucial components in electronic devices.

Latest Patents

Anne-Marie holds a patent for a method of correcting the voltage coefficient of resistors implanted in semiconductor bodies. This patent describes a method and structure for correcting the voltage coefficient of resistance (VCR) of a resistor. The resistor may be diffused or ion implanted of one conductivity and formed in an isolated layer of the opposite type of conductivity. The layer is typically an epitaxial layer. A potential V.sub.1 is applied to one end of the resistor and a potential V.sub.2 is applied to the opposite end. The method provides means for controlling variations of the potential difference between the resistive region and the epitaxial layer. This control minimizes distortions generated by such variations, ensuring that the overall distortion is equal to zero.

Career Highlights

Anne-Marie is associated with the International Business Machines Corporation, commonly known as IBM. Her work at IBM has allowed her to contribute to advancements in semiconductor technology. She has been recognized for her innovative approach to solving complex engineering problems.

Collaborations

Throughout her career, Anne-Marie has collaborated with esteemed colleagues such as Gerard M Lebesnerais and Jean-Paul J Nuez. These collaborations have further enriched her work and contributed to the development of new technologies.

Conclusion

Anne-Marie Lamouroux's contributions to the field of semiconductor technology are noteworthy. Her innovative patent for correcting the voltage coefficient of resistors demonstrates her expertise and commitment to advancing technology. Her work continues to impact the industry positively.