Company Filing History:
Years Active: 2012
Title: **Anna Rita Odorizzi: Pioneering Innovations in Phase Change Memory Technology**
Introduction
Anna Rita Odorizzi, an accomplished inventor based in Lecco, Italy, has made significant strides in the field of memory technologies. With her innovative mindset and technical expertise, she has secured a patent that showcases her contribution to advancing circuit and memory array technologies.
Latest Patents
Anna Rita holds one patent titled "Controlling the circuitry and memory array relative height in a phase change memory feol process flow." This patent describes a method where a CMOS logic portion embedded with a phase change memory (PCM) portion is recessed by a gate structure. The gate structure height is measured by the thickness of both the gate oxide and a polysilicon gate, ensuring the planarity of the CMOS logic portion with the PCM portion. This innovation is critical for enhancing the performance and reliability of memory systems.
Career Highlights
Currently, Anna Rita Odorizzi is a valuable member of Micron Technology Incorporated, a leading company in memory and storage solutions. Her work at Micron underscores her capability and commitment to developing cutting-edge technologies in the semiconductor industry.
Collaborations
In her professional journey, Anna Rita has collaborated with notable coworkers such as Marcello Mariani and Lorenzo Fratin. These partnerships have allowed her to leverage diverse expertise, enhancing the impact of her innovations and contributing to successful advancements in memory technology.
Conclusion
Anna Rita Odorizzi exemplifies the spirit of innovation in the technology sector. With her patent and collaborative efforts, she continues to pave the way for future advancements in phase change memory technologies. Her work not only contributes to Micron Technology Incorporated but also positions her as a significant player in the realm of memory solutions.