Paris, France

Anna Fontcubera I Morral

This inventor holds 1 USPTO granted patent. Top assignee: California Institute of Technology. Active years: 2008.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 15(Granted Patents)


Company Filing History:


Years Active: 2008

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1 patent (USPTO):Explore Patents

Title: The Innovations of Anna Fontcubera I Morral

Introduction

Anna Fontcubera I Morral is a prominent inventor based in Paris, France. He has made significant contributions to the field of optoelectronics through his innovative patents. His work focuses on enhancing the performance and efficiency of optoelectronic devices.

Latest Patents

One of his notable patents is titled "Wafer bonded epitaxial templates for silicon heterostructures." This patent describes a method where a heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. The invention involves bonding a device substrate to a handle substrate, which provides mechanical support. The device substrate is composed of materials suitable for fabricating optoelectronic devices. The process improves the mechanical strength of the substrates and allows for thinning the device substrate to leave a single-crystal film on the virtual substrate. This innovation results in a smoother and less defect-prone surface for optoelectronic device fabrication.

Career Highlights

Anna Fontcubera I Morral is affiliated with the California Institute of Technology, where he continues to advance research in optoelectronics. His work has garnered attention for its potential applications in various technological fields.

Collaborations

He has collaborated with notable colleagues, including Harry A. Atwater and James M. Zahler, who share a commitment to advancing the field of optoelectronics.

Conclusion

Anna Fontcubera I Morral's contributions to the field of optoelectronics through his innovative patents highlight his role as a leading inventor. His work continues to influence the development of advanced optoelectronic devices.

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