Ann K Liao

Title: The Innovations of Ann K Liao

Introduction

Ann K Liao is a prominent inventor based in Boise, ID (US). She has made significant contributions to the field of semiconductor technology, particularly in the development of buried bit line DRAM circuitry. With a total of 3 patents to her name, Liao's work has had a substantial impact on the industry.

Latest Patents

One of her latest patents focuses on methods of forming buried bit line DRAM circuitry. This innovative method includes collectively forming a buried bit line forming trench, bit line vias extending from the trench, and memory array storage node vias within a dielectric mass using only two masking steps. Conductive material is simultaneously deposited to within the buried bit line forming trench, the bit line vias, and the memory storage node vias within the dielectric mass. Other aspects and implementations are also contemplated in this patent.

Career Highlights

Ann K Liao is currently employed at Micron Technology Incorporated, where she continues to push the boundaries of technology. Her work at Micron has allowed her to collaborate with some of the brightest minds in the industry, further enhancing her contributions to semiconductor innovations.

Collaborations

One of her notable coworkers is Michael J Westphal, with whom she has worked closely on various projects. Their collaboration has led to advancements in the field and has fostered a productive working environment.

Conclusion

Ann K Liao's contributions to the field of semiconductor technology are noteworthy. Her innovative patents and work at Micron Technology Incorporated highlight her role as a leading inventor in the industry.