Malta, NY, United States of America

Ankur R Sharma

This inventor holds 1 USPTO granted patent. Top assignee: Arizona State University. Active years: 2017.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ankur R Sharma. Retrieved from https://idiyas.com/inventor/ankur-r-sharma

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2017

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1 patent (USPTO):Explore Patents

Title: Ankur R Sharma: Innovator in Optical Devices

Introduction

Ankur R Sharma is a notable inventor based in Malta, NY (US). He has made significant contributions to the field of optical devices, particularly through his innovative work involving bismuth-containing III-V compound semiconductors. His research has implications for various applications in optics and photonics.

Latest Patents

Ankur R Sharma holds a patent for an optical device based on bismuth-containing III-V compound multilayer semiconductors. The patent describes optical devices that utilize a pseudomorphic superlattice formed on a substrate. This superlattice consists of alternating InAsSb layers and InAsBi layers, which enhance the performance of optical devices.

Career Highlights

Ankur R Sharma is affiliated with Arizona State University, where he continues to advance his research in semiconductor materials and optical technologies. His work has garnered attention for its potential to improve optical device efficiency and functionality.

Collaborations

Ankur has collaborated with esteemed colleagues such as Preston T Webster and Chaturvedi Gogineni. These collaborations have further enriched his research and contributed to the development of innovative optical solutions.

Conclusion

Ankur R Sharma's contributions to the field of optical devices exemplify the impact of innovative research in advancing technology. His work continues to inspire future developments in semiconductor applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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