Ankang Li

Title: Ankang Li: Innovator in Lateral Insulated Gate Bipolar Transistors

Introduction

Ankang Li is a notable inventor based in Jiangsu, China. He has made significant contributions to the field of electrical engineering, particularly in the development of advanced semiconductor devices. His work focuses on improving the performance and efficiency of power electronics.

Latest Patents

Ankang Li holds a patent for a lateral insulated gate bipolar transistor (IGBT) with low turn-on overshoot current. This innovative device is designed to reduce the peak current flowing through the device during the turn-on of a second gate pulse. The design ensures that the current capability and withstand voltage capability are not degraded. The lateral IGBT features a buried oxygen layer on a P-type substrate, an N-type drift region, and various other regions that work together to enhance performance.

Career Highlights

Ankang Li is affiliated with Southeast University, where he continues to engage in research and development in the field of semiconductor technology. His expertise in IGBT technology has positioned him as a key figure in advancing power electronics.

Collaborations

Ankang Li has collaborated with notable colleagues, including Jing Zhu and Long Zhang. Their combined efforts contribute to the ongoing research and innovation in the field of electrical engineering.

Conclusion

Ankang Li's contributions to the development of lateral insulated gate bipolar transistors highlight his role as an innovator in the semiconductor industry. His work not only enhances device performance but also paves the way for future advancements in power electronics.