Lateral insulated gate bipolar transistor with low turn-on overshoot current

Abstract

A lateral insulated gate bipolar transistor (IGBT) with a low turn-on overshoot current is provided to reduce a peak value of a current flowing through a device during turn-on of a second gate pulse while preventing a current capability and a withstand voltage capability from being degraded. The lateral IGBT includes: a buried oxygen arranged on a P-type substrate, an N-type drift region arranged on the buried oxygen, on which a P-type body region and an N-type buffer region are arranged, a P-type collector region arranged in the N-type buffer region, a field oxide layer arranged above the N-type drift region, a P-type well region arranged in the P-type body region, and a P-type emitter region and an emitter region arranged in the P-type well region, where inner boundaries of the foregoing 4 regions are synchronously recessed to form a pinch-off region. A gate oxide layer is arranged on a surface of the P-type body region, and a polysilicon gate is arranged on the gate oxide layer. The polysilicon gate includes a first gate located above the surface of the P-type body region and a second gate located above the pinch-off region and the N-type drift region. The first gate is connected to a first gate resistor, and the second gate is connected to a second gate resistor.