Company Filing History:
Years Active: 2015
Title: Anjo Kenji: Innovator in Thin Film Transistor Technology
Introduction
Anjo Kenji is a notable inventor based in Hsinchu, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of thin film transistors. His innovative work has implications for various electronic applications.
Latest Patents
Anjo Kenji holds a patent for a thin film transistor, which includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor and features one or two high oxygen ion concentration regions. Each region has an oxygen ion density ranging from about 1×10 to about 1×10 per cubic centimeter. This patent also encompasses a thin film transistor substrate and a method for manufacturing it.
Career Highlights
Anjo Kenji is associated with Ye Xin Technology Consulting Co., Ltd., where he applies his expertise in semiconductor technology. His work at the company has allowed him to further explore and develop innovative solutions in the field.
Collaborations
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Conclusion
Anjo Kenji's contributions to thin film transistor technology highlight his role as an influential inventor in the semiconductor industry. His innovative patent reflects the ongoing advancements in electronic components.