The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Dec. 31, 2013
Applicant:
YE Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Inventor:
Anjo Kenji, Hsinchu, JP;
Assignee:
Ye Xin Technology Consulting Co., Ltd., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/8234 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 29/66969 (2013.01); H01L 29/78693 (2013.01);
Abstract
A thin film transistor includes a gate electrode, a channel layer, a source electrode, and a drain electrode. The channel layer is made of an amorphous oxide semiconductor. The channel layer includes one high oxygen ion concentration region, or two high oxygen ion concentration regions one above the other. An oxygen ion density of each high oxygen ion concentration region is in a range of from about 1×10to about 1×10per cubic centimeter. A thin film transistor substrate and a method of manufacturing the thin film transistor substrate are also provided.