Villach, Austria

Anita Satz

USPTO Granted Patents = 1 

Average Co-Inventor Count = 8.0

ph-index = 1


Company Filing History:


Years Active: 2022

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1 patent (USPTO):Explore Patents

Title: Anita Satz: Innovator in Semiconductor Technology

Introduction

Anita Satz is a prominent inventor based in Villach, Austria. She has made significant contributions to the field of semiconductor technology, particularly through her innovative patent. Her work focuses on enhancing the performance and reliability of power semiconductor devices.

Latest Patents

Anita Satz holds a patent for "Passivation structuring and plating for semiconductor devices." This patent describes a method for producing power semiconductor devices that includes several key steps. The method involves forming a structured metallization layer above a semiconductor substrate, followed by the creation of a protective layer on this structured metallization. A first passivation layer is then applied, with the protective layer interposed between them. The first passivation is structured to expose certain regions of the protective layer, which are subsequently removed to reveal parts of the structured metallization layer. Finally, a second passivation is formed, and electroless plating is performed on the exposed parts of the structured metallization layer.

Career Highlights

Anita Satz is currently employed at Infineon Technologies Austria AG, where she continues to advance her research and development efforts in semiconductor technology. Her work has been instrumental in improving the efficiency and effectiveness of power semiconductor devices.

Collaborations

Anita has collaborated with notable colleagues, including Ravi Keshav Joshi and Andreas Behrendt. These collaborations have further enriched her research and contributed to the success of her projects.

Conclusion

Anita Satz is a trailblazer in the semiconductor industry, with her innovative patent showcasing her expertise and dedication to advancing technology. Her contributions are vital to the ongoing development of efficient power semiconductor devices.

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