The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 12, 2022
Filed:
Aug. 21, 2020
Infineon Technologies Austria Ag, Villach, AT;
Ravi Keshav Joshi, Klagenfurt, AT;
Andreas Behrendt, Villach, AT;
Richard Gaisberger, Velden, AT;
Anita Satz, Villach, AT;
Johanna Schlaminger, Villach, AT;
Johann Schmid, Villach, AT;
Mario Stanovnik, Villach, AT;
Juergen Steinbrenner, Noetsch, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
Described herein is a method and a power semiconductor device produced by the method. The method includes: forming a structured metallization layer above a semiconductor substrate; forming a protective layer on the structured metallization layer; forming a first passivation over the structured metallization layer with the protective layer interposed between the first passivation and the structured metallization layer; structuring the first passivation to expose one or more regions of the protective layer; removing the one or more exposed regions of the protective layer to expose one or more parts of the structured metallization layer; and after structuring the first passivation and removing the one or more exposed regions of the protective layer, forming a second passivation on the first passivation and electroless plating the one or more exposed parts of the structured metallization layer.