Anissa Lagha

Title: Anissa Lagha: Innovator in Semiconductor Manufacturing

Introduction

Anissa Lagha is a prominent inventor based in Montbonnot, France. She has made significant contributions to the field of semiconductor manufacturing, showcasing her expertise through her innovative patent.

Latest Patents

Anissa Lagha holds a patent titled "Method for manufacturing a semiconductor device and semiconductor device obtainable with such a method." This patent describes a method that includes providing a patterned hard-mask layer on an exposed surface of one or more layers of a semiconductor intermediate product. The hard-mask layer covers the exposed surface in certain areas while leaving other areas bare. The method involves forming one or more recesses in the layers by partially removing them in the bare areas, followed by the removal of the hard-mask layer. Finally, the recess is filled with a filling material. This innovative approach enhances the efficiency and effectiveness of semiconductor device manufacturing.

Career Highlights

Throughout her career, Anissa has worked with notable companies in the semiconductor industry, including Freescale Semiconductor, Inc. and STMicroelectronics (Crolles 2) SAS. Her experience in these organizations has contributed to her development as a leading inventor in her field.

Collaborations

Anissa has collaborated with talented professionals such as Robert Fox and Lucile Broussous. These partnerships have allowed her to further enhance her innovative capabilities and contribute to advancements in semiconductor technology.

Conclusion

Anissa Lagha's contributions to semiconductor manufacturing through her patent and professional collaborations highlight her role as a key innovator in the industry. Her work continues to influence the development of advanced semiconductor devices.