The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 22, 2012
Filed:
Oct. 09, 2007
Anissa Lagha, Montbonnot, FR;
Robert Fox, Singapore, SG;
Lucile Broussous, Goncelin, FR;
Didier Levy, Saint Nazaire les Eymes, FR;
Anissa Lagha, Montbonnot, FR;
Robert Fox, Singapore, SG;
Lucile Broussous, Goncelin, FR;
Didier Levy, Saint Nazaire les Eymes, FR;
Freescale Semiconductor, Inc., Austin, TX (US);
ST Microelectronics (Crolles 2) SAS, Crolles, FR;
Abstract
A method for manufacturing a semiconductor device includes providing a patterned hard-mask layer. The hard-mask layer is provided on an exposed surface of one or more layers to be patterned of a semiconductor intermediate product. The hard-mask layer covers the exposed surface in covered areas of the one or more layers to be patterned and does not cover the exposed surface in bared areas of the one or more layers to be patterned. One or more recesses are formed in the layers to be patterned by at least partially removing the layers to be patterned in the bared areas. The hard-mask layer is ten removed. After removing the hard-mask layer the recess is filled with a filling material.