Portland, OR, United States of America

Anindya Dasgupta

USPTO Granted Patents = 6 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 18(Granted Patents)


Company Filing History:


Years Active: 2017-2024

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6 patents (USPTO):Explore Patents

Title: The Innovative Mind of Anindya Dasgupta

Introduction

Anindya Dasgupta, an accomplished inventor based in Portland, OR, has made significant contributions to the field of integrated circuit structure fabrication. With a total of six patents to his name, his work focuses particularly on advanced technologies that push the boundaries of semiconductor design and fabrication.

Latest Patents

Two of Anindya Dasgupta's most notable patents include innovations in dual metal gate structures. The first patent details a dual metal gate structure that involves portions of metal gate layers in contact with a gate dielectric. This invention is particularly relevant for the fabrication of integrated circuits at the 10-nanometer node and smaller, featuring a semiconductor substrate with an N well region and a semiconductor fin protruding therefrom. It highlights the importance of a trench isolation layer that supports the semiconductor fin, enhancing the structural integrity of the circuit.

The second patent focuses on differentiated voltage threshold metal gate structures. This innovation also caters to 10-nanometer node fabrication and includes an N-type gate electrode placed over the gate dielectric layer on the fin, showcasing a layered approach with a P-type metal layer underneath an N-type metal layer. This method aims to improve performance and efficiency in advanced semiconductor devices.

Career Highlights

Anindya Dasgupta has established a prominent career at Intel Corporation, a leading player in global semiconductor manufacturing. His technical expertise and innovative mindset have played a crucial role in advancing integrated circuit technology. With an impressive portfolio of patents, Dasgupta has positioned himself as a key figure in the evolution of semiconductor design.

Collaborations

Throughout his career, Anindya has collaborated with notable professionals in the industry, including Jeffrey S. Leib and Jenny Hu. These partnerships have not only fostered innovation but have also contributed to the successful development and implementation of cutting-edge technologies in semiconductor fabrication.

Conclusion

Anindya Dasgupta exemplifies the spirit of innovation in the semiconductor industry. His six patents reflect a deep understanding of advanced integrated circuit structure fabrication, and his work continues to influence the technology landscape significantly. As he collaborates with esteemed colleagues, his contributions promise to shape the future of semiconductor technology, leading to more efficient and powerful electronic devices.

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