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Years Active: 2009
Title: Anil Kottantharyil: Innovator in Semiconductor Technology
Introduction
Anil Kottantharyil is a notable inventor based in Leuven, Belgium. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for manufacturing MOSFET devices. His innovative approach has led to advancements that enhance the performance and reliability of electronic components.
Latest Patents
Anil Kottantharyil holds a patent for a "Method for forming a fully silicided gate and devices obtained thereof." This method describes a technique for manufacturing a MOSFET device with a fully silicided (FUSI) gate. The innovation aims to prevent the formation of shorts between the FUSI gate and contacts to the source and/or drain regions. The method includes the formation of an expansion volume above a gate dielectric, designed to substantially contain the fully silicided gate.
Career Highlights
Throughout his career, Anil has worked with prominent organizations in the semiconductor industry. He has been associated with the Interuniversitair Microelektronica Centrum (imec) and Texas Instruments Corporation. His work in these companies has allowed him to collaborate with leading experts in the field and contribute to groundbreaking research and development.
Collaborations
Anil Kottantharyil has collaborated with notable professionals such as Jorge Adrian Kittl and Anne Lauwers. These collaborations have further enriched his work and have led to advancements in semiconductor technologies.
Conclusion
Anil Kottantharyil's contributions to semiconductor technology, particularly through his patented methods, highlight his role as an innovator in the field. His work continues to influence the development of reliable electronic devices.