Anil K Agarwal

Title: Anil K Agarwal: Innovator in Hybrid Microcircuits

Introduction

Anil K Agarwal is a notable inventor based in Poway, California. He has made significant contributions to the field of hybrid microcircuits, particularly through his innovative designs and methodologies. His work focuses on enhancing the performance and reliability of microelectronic components.

Latest Patents

Anil K Agarwal holds a patent for a "Ceramic Substrate With Metal Filled Via Holes For Hybrid Microcircuits And Method Of Making The Same." This invention involves an as-fired alumina substrate designed for hybrid microcircuits that utilize GaAs dies operating at gigahertz frequencies. The substrate features numerous via holes, approximately 0.013 inches in diameter, which are drilled using a laser. Each via hole is filled with a metal composition consisting of about 85% sintered tungsten and 15% copper, ensuring a thermal coefficient of expansion that closely matches that of the GaAs dies and the alumina substrate. This design not only facilitates hermetic sealing of the via holes but also enhances heat dissipation and provides low inductance ground paths for the microcircuit.

Career Highlights

Throughout his career, Anil K Agarwal has focused on advancing microelectronic technologies. His innovative approaches have led to improved thermal management and performance in high-frequency applications. His work has been instrumental in the development of reliable hybrid microcircuits.

Collaborations

Anil K Agarwal has collaborated with Ramachandra M P Panicker, contributing to the advancement of microelectronic technologies. Their partnership has fostered innovation in the field.

Conclusion

Anil K Agarwal's contributions to hybrid microcircuits demonstrate his commitment to innovation and excellence in the field of microelectronics. His patented designs and methodologies continue to influence the development of advanced electronic components.