Andy Teng Yu

Title: Spotlight on Inventor Andy Teng Yu: Innovator in Nonvolatile Memory Technology

Introduction: Andy Teng Yu, located in Palo Alto, CA, is a notable inventor with a focus on advanced memory technology. With a keen understanding of semiconductor devices, Yu has made significant contributions to the field of nonvolatile memory storage.

Latest Patents: Yu holds a patent for a nonvolatile PMOS two-transistor memory cell and array. This inventive solution features a plurality of PMOS two-transistor (2T) memory cells that utilize a PMOS floating gate transistor and a PMOS select transistor, effectively connected between a bit line and a common source line. The architecture allows for efficient programming through FN tunneling and BTBT induced hot electron injection, while erasure is achieved using FN tunneling. The design also incorporates sector division with n-well regions for enhanced organization of the memory cells.

Career Highlights: Yu currently works at Programmable Microelectronics Corporation, where she continues to advance the development of memory technologies. Her contributions have played a crucial role in the evolution of memory architectures, addressing the demanding needs of modern electronics.

Collaborations: Throughout her career, Yu has collaborated with esteemed colleagues such as Shang-De Ted Chang and Vikram Kowshik. Together, they have contributed to projects that push the boundaries of memory technology, fostering innovation in the semiconductor industry.

Conclusion: Andy Teng Yu exemplifies the spirit of innovation through her advancements in nonvolatile memory technology. Her patented work not only demonstrates her expertise but also reflects her commitment to enhancing the capabilities of memory systems in modern applications. As she continues her work at Programmable Microelectronics Corporation, Yu remains a significant figure in the realm of semiconductor inventions.