Singapore, Singapore

Andy Eu-Jin Lim

This inventor holds 1 USPTO granted patent. Top assignee: Agency for Science, Technology and Research. Active years: 2016.


% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2016

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1 patent (USPTO):Explore Patents

Title: The Innovations of Andy Eu-Jin Lim

Introduction

Andy Eu-Jin Lim is a notable inventor based in Singapore, SG. He has made significant contributions to the field of photodetectors, particularly with his innovative designs. His work is recognized for its potential applications in various technological advancements.

Latest Patents

One of Andy Eu-Jin Lim's key patents is the P-I-N photodiode with a dopant diffusion barrier layer. This invention provides a pin photodetector that includes a dopant diffusion barrier layer situated within the active light-absorbing region. This design enhances the performance and efficiency of photodetectors, making it a valuable contribution to the field.

Career Highlights

Andy Eu-Jin Lim is associated with the Agency for Science, Technology and Research, where he continues to push the boundaries of innovation. His work has garnered attention for its practical applications and contributions to scientific research.

Collaborations

He has collaborated with notable colleagues such as Tsung-Yang Liow and Patrick Guo-Qiang Lo. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Andy Eu-Jin Lim's contributions to the field of photodetectors exemplify the spirit of innovation. His patent on the P-I-N photodiode showcases his commitment to advancing technology. His work continues to inspire future developments in the field.

Profile summary based on public USPTO records.
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