Andrew J Robison

Title: Andrew J Robison: Innovator in Memory Technology

Introduction

Andrew J Robison is a notable inventor based in Ft. Collins, CO (US). He has made significant contributions to the field of memory technology, particularly in static random access memory (SRAM) systems. With a total of 2 patents, Robison's work focuses on optimizing memory access methods to enhance performance and efficiency.

Latest Patents

Robison's latest patents include innovative methods that improve SRAM write optimization. The first patent, titled "Weak precharge before write dual-rail SRAM write optimization," describes a method for accessing a memory cell that involves enabling precharging of a bit line before the next access. This method strategically disables precharging based on whether the next access is a write or a read, with the first interval being shorter than the second. The second patent, "Staged bitline precharge," outlines a processing system that reduces current spikes during precharging by staging the precharging of bitlines in a SRAM array. This method groups entries into subsets and applies different precharge signals over time, resulting in smaller current spikes compared to simultaneous precharging.

Career Highlights

Robison is currently employed at Advanced Micro Devices Corporation, where he continues to develop cutting-edge memory technologies. His work has been instrumental in advancing the capabilities of SRAM systems, making them more efficient and reliable.

Collaborations

Throughout his career, Robison has collaborated with talented individuals such as Tawfik Ahmed and Russell J Schreiber. These collaborations have contributed to the successful development of innovative memory solutions.

Conclusion

Andrew J Robison is a prominent figure in the field of memory technology, with a focus on optimizing SRAM systems. His patents reflect his commitment to innovation and efficiency in memory access methods. His contributions continue to shape the future of memory technology.