SE-175 23, Järfälla, Sweden

Andrei Konstantinov


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 12(Granted Patents)


Company Filing History:

goldMedal1 out of 832,843 
Other
 patents

Years Active: 2001

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1 patent (USPTO):Explore Patents

Title: Andrei Konstantinov: Innovator in Semiconductor Technology

Introduction

Andrei Konstantinov is a notable inventor based in Järfälla, Sweden. He has made significant contributions to the field of semiconductor technology, particularly in the production of silicon carbide (SiC) devices. His innovative methods have the potential to advance the capabilities of microelectromechanical systems (MEMS) and pressure sensors.

Latest Patents

Andrei Konstantinov holds 1 patent for his invention titled "Method of producing a semiconductor device of SiC." This patent describes a method for selective etching of SiC, which involves applying a positive potential to a layer of p-type SiC in contact with an etching solution containing fluorine ions. The etching solution has an oxidizing effect on SiC, allowing for the creation of intricate microstructures with free-hanging parts, such as diaphragms and cantilevers.

Career Highlights

Throughout his career, Konstantinov has focused on enhancing the production processes of semiconductor devices. His work has implications for various applications, including MEMS devices and piezo-resistive pressure sensors. His innovative approach to etching SiC has positioned him as a key figure in semiconductor research and development.

Collaborations

Andrei Konstantinov has collaborated with notable colleagues, including Christian Adås and Stefan Karlsson. These partnerships have contributed to the advancement of semiconductor technologies and the exploration of new applications for SiC devices.

Conclusion

Andrei Konstantinov's contributions to semiconductor technology through his innovative methods for producing SiC devices highlight his role as a significant inventor in the field. His work continues to influence advancements in microelectromechanical systems and pressure sensors.

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