The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 2001
Filed:
Feb. 01, 2000
Christian Adås, SE-113 31, Stockholm, SE;
Stefan Karlsson, SE-164 43, Kista, SE;
Andrei Konstantinov, SE-175 23, Järfälla, SE;
Christopher Harris, SE-191 72, Sollentuna, SE;
Thomas Hörman, SE-118 58, Stockholm, SE;
Other;
Abstract
The invention relates to a method for selective etching of SiC, the etching being carried out by applying a positive potential to a layer (,) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC. The invention also relates to a method for producing a SiC micro structure having free hanging parts (i.e. diaphragm, cantilever or beam) on a SiC-substrate, a method for producing a MEMS device of SiC having a free hanging structure, and a method for producing a piezo-resistive pressure sensor comprising the step of applying a positive potential to a layer (,) of p-type SiC being in contact with an etching solution containing fluorine ions and having an oxidising effect on SiC.