Company Filing History:
2 out of 1,156 
1 out of 1 Years Active: 1993-2000
Title: Andre Scavennec: Innovator in Photodetector Technology
Introduction
Andre Scavennec is a notable inventor based in Paris, France. He has made significant contributions to the field of photodetector technology, holding a total of 3 patents. His work has advanced the understanding and application of semiconductor devices.
Latest Patents
One of his latest patents is a metal-semiconductor-metal photodetector. This device includes an absorbent layer, a barrier layer of greater forbidden band energy on which Schottky electrodes are deposited, and a transition layer of graded composition. The photodetector features a doping plane situated near the junction between the absorbent layer and the transition layer of graded composition. Another significant patent is for an avalanche photodiode. This device comprises an absorption zone, a multiplication zone, and a transition zone located between the absorption and multiplication zones. The transition zone is doped and consists, at least in part, of a material with graded composition, ensuring that the energy bands of the structure remain substantially continuous when biased.
Career Highlights
Throughout his career, Andre Scavennec has worked with prominent organizations, including France Telecom and the Centre National d'Études des Télécommunications. His experience in these companies has allowed him to refine his expertise in semiconductor technologies and photodetectors.
Collaborations
Andre has collaborated with several talented individuals in his field, including Louis Menigaux and Alain Carenco. These collaborations have contributed to the innovative advancements in photodetector technology.
Conclusion
Andre Scavennec's contributions to the field of photodetector technology are noteworthy. His patents reflect a deep understanding of semiconductor devices and their applications. His work continues to influence the industry and inspire future innovations.