The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 1999
Filed:
Nov. 26, 1997
Applicant:
Inventors:
Thomas Barrou, Cachan, FR;
Andre Scavennec, Paris, FR;
Assignee:
France Telecom, Paris, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257185 ; 257186 ; 257191 ; 257 21 ; 257438 ;
Abstract
An avalanche photodiode having an absorption zone, a multiplication zone, and a transition zone disposed between the absorption zone and the multiplication zone, the transition zone being doped and being constituted at least in part by a material of composition that is graded such that the energy bands of the structure are substantially continuous when it is biased, wherein said doping is distributed non-uniformly in said graded composition zone so as to compensate, at least in part, the reverse electric field due to the composition grading of the material in the transition zone.