Andre-Jacques Auberton-Herve

Title: Andre-Jacques Auberton-Herve: Innovator in Static Memory Technology

Introduction

Andre-Jacques Auberton-Herve is a notable inventor based in Saint-Égrève, France. He has made significant contributions to the field of microelectronics, particularly in the development of static memory technology. His innovative work has led to the creation of a unique memory cell that enhances data storage capabilities.

Latest Patents

Auberton-Herve holds a patent for a MIS type static memory cell and memory and storage process. This invention pertains to a static memory cell of the metal-insulator-semiconductor type, which is utilized in the microelectronics field for producing random access memories for storing binary information. The MIS type memory cell is recognized as a random access static memory cell, commonly abbreviated as SRAM. The design features a bistable flip-flop formed by a MIS transistor and a parasitic bipolar transistor. The source and drain of the MIS transistor serve as the emitter and collector of the bipolar transistor, while the channel region between the source and drain acts as the base for the bipolar transistor. Notably, the base is completely isolated from the external environment of the memory cell, and the gate electrode of the MIS transistor is electrically isolated from the channel region. An addressing circuit is included for the flip-flop to store binary information in the form of current presence or absence.

Career Highlights

Auberton-Herve is associated with the Commissariat à l'Énergie Atomique et aux Énergies Alternatives, where he continues to advance research in energy and technology. His work has been pivotal in enhancing the efficiency and functionality of memory storage systems.

Collaborations

One of his notable collaborators is Benoit Giffard, with whom he has worked on various projects related to memory technology.

Conclusion

Andre-Jacques Auberton-Herve's contributions to the field of microelectronics, particularly through his innovative static memory cell, have established him as a key figure in advancing memory technology. His work continues to influence the development of efficient data storage solutions.