Sunnyvale, CA, United States of America

Ananth Naman

This inventor holds 2 USPTO granted patents. Top assignee: Seagate Technology Incorporated. Active years: 2002-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ananth Naman. Retrieved from https://idiyas.com/inventor/ananth-naman-pplwcnl8

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 8.6

ph-index = 2

Forward Citations = 40(Granted Patents)


Location History:

  • Edina, MN (US) (2002)
  • Sunnyvale, CA (US) (2004)

Company Filing History:


Years Active: 2002-2004

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2 patents (USPTO):Explore Patents

Title: Ananth Naman: Innovator in Spin Valve Sensor Technology

Introduction

Ananth Naman is a notable inventor based in Sunnyvale, CA (US). He has made significant contributions to the field of data storage systems through his innovative work on spin valve sensors. With a total of 2 patents, Naman's inventions are at the forefront of technology in this area.

Latest Patents

Naman's latest patents include a spin valve sensor designed for use with data storage systems. This sensor features free and pinned ferromagnetic layers, a conducting layer in between, contact leads, free layer biasing elements, and an anti-ferromagnetic layer. The pinned layer has opposing ends that define the width of an active region, which exhibits a giant magnetoresistive effect in response to applied magnetic fields. The free layer is strategically positioned below the pinned layer, extending beyond the active region. Additionally, the contact leads abut the pinned layer and overlay portions of the conducting layer, while the free layer biasing elements help maintain the magnetization of the free layer in a longitudinal direction.

Another patent involves a spin valve sensor with exchange tabs. This invention comprises a first layer of ferromagnetic material and a second layer of ferromagnetic material, with a non-ferromagnetic layer positioned between them. A pinning layer is adjacent to the first layer, ensuring contact with it. The spin valve includes synthetic antiferromagnetic bias means that extend over the passive end regions of the second layer, producing a longitudinal bias sufficient to maintain these regions in a single domain state. A method for forming this spin valve sensor is also disclosed.

Career Highlights

Ananth Naman is currently employed at Seagate Technology Incorporated, where he continues to push the boundaries of innovation in data storage technology. His work has been instrumental in advancing the capabilities of spin valve sensors, which are critical components in modern data storage solutions.

Collaborations

Naman has collaborated with talented individuals such as Sining Mao and Alexander Mikhailovich Shukh. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Ananth Naman's contributions to the field of spin valve sensors exemplify his innovative spirit and dedication to advancing technology. His patents reflect a deep understanding of the complexities involved in data storage systems, making him a valuable asset in the

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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