Decatur, GA, United States of America

Amy C Sulivan

This inventor holds 1 USPTO granted patent. Top assignee: University of Colorado. Active years: 2014.


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2014

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1 patent (USPTO):Explore Patents

Title: Amy C. Sulivan: Innovator in Photolithography

Introduction

Amy C. Sulivan is a prominent inventor based in Decatur, GA (US). She has made significant contributions to the field of photolithography, particularly through her innovative methods and systems. Her work has implications for various applications in materials science and engineering.

Latest Patents

Amy holds a patent for "Diffraction Unlimited Photolithography." This patent discloses methods, devices, systems, and materials for diffraction unlimited photofabrication. The method involves illuminating a photoresponsive material with a first optical pattern at a first wavelength of light, which alters the solubility of the photoresponsive organic material. Additionally, the material is illuminated with a second optical pattern at a second wavelength of light, which hinders the ability of the first wavelength to alter the solubility where the two patterns overlap. The photoresponsive organic material is then developed, showcasing the innovative approach Amy has taken in her research.

Career Highlights

Amy is affiliated with the University of Colorado, where she continues to advance her research in photolithography. Her work has garnered attention for its potential to revolutionize the field and improve fabrication techniques.

Collaborations

Amy has collaborated with notable colleagues, including Robert R. McLeod and Timothy Francis Scott. These partnerships have contributed to the depth and breadth of her research, enhancing the impact of her innovations.

Conclusion

Amy C. Sulivan is a trailblazer in the field of photolithography, with her patent and collaborative efforts paving the way for future advancements. Her contributions are vital to the ongoing evolution of materials science and engineering.

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