San Jose, CA, United States of America

Amir Sanayei


Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 9(Granted Patents)


Company Filing History:


Years Active: 2020-2022

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2 patents (USPTO):Explore Patents

Title: Innovations by Amir Sanayei in Solid-State Storage Technology

Introduction

Amir Sanayei is an accomplished inventor based in San Jose, CA, known for his contributions to the field of solid-state storage technology. With a total of 2 patents, he has made significant advancements that enhance the reliability and performance of non-volatile memory systems.

Latest Patents

Amir's latest patents include a method and system involving the degradation of non-volatile memory based on write commands. This innovation describes how a solid-state storage device receives a plurality of host-write commands. It determines the number of drive-writes per day based on these commands and assesses the aggregated degradation of internal non-volatile memory components. By utilizing a machine-learned model, the system generates a probability of failure value, which is crucial for predicting potential failures. An alert is then generated based on this probability or a degradation threshold. Another patent focuses on leveraging machine learning for storage drive-level failure and health prediction, further solidifying his expertise in this area.

Career Highlights

Amir Sanayei is currently employed at Western Digital Technologies, Inc., where he continues to innovate in the realm of solid-state drives. His work is pivotal in developing systems that enhance the longevity and reliability of storage devices, making significant contributions to the industry.

Collaborations

Amir collaborates with talented professionals such as Jay Sarkar and Cory J Peterson, contributing to a dynamic team environment that fosters innovation and creativity.

Conclusion

Amir Sanayei's work in solid-state storage technology exemplifies the impact of innovative thinking in enhancing data storage solutions. His patents reflect a commitment to improving the reliability and performance of non-volatile memory systems.

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