Chanhassen, MN, United States of America

Amir Massoud Dabiran

This inventor holds 3 USPTO granted patents and 2 published patent applications. Top assignees: Svt Associates, Inc., Other. Active years: 2010-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Amir Massoud Dabiran. Retrieved from https://idiyas.com/inventor/amir-massoud-dabiran

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 66.7

Average Co-Inventor Count = 1.7

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:

goldMedal1 out of 3 
 
Svt Associates, Inc.
 patents
silverMedal1 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2010-2026

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3 patents (USPTO):Explore Patents

Title: Amir Massoud Dabiran: Innovator in High-Energy Particle Sensing

Introduction

Amir Massoud Dabiran is a notable inventor based in Chanhassen, MN (US). He has made significant contributions to the field of high-energy particle sensing, holding a total of 3 patents. His work focuses on advanced imaging technologies that enhance the detection and analysis of high-energy particles.

Latest Patents

Dabiran's latest patents include a multi-purpose high-energy particle sensor array and a method of making the same for high-resolution imaging. This innovative imaging apparatus features a multi-purpose high-energy particle sensor array designed to initially stop high-energy particles and subsequently transfer the down-converted photons into near zero energy photoelectrons. The apparatus is characterized by a segmented scintillator structure that is optically coupled to a closely placed photocathode structure, allowing for high-efficiency conversion of high-energy particles into a corresponding distribution of photoelectrons, emitted with minimal spread in energy and momentum.

Another significant patent is the triple heterostructure incorporating a strained zinc oxide layer for emitting light at high temperatures. This heterostructure semiconductor device is capable of emitting electromagnetic radiation and features a junction with opposite conductivity type materials on either side, supported on a substrate with an active layer comprising zinc oxide. The band gap energy of the zinc oxide is less than that of either of the opposite conductivity type materials, making it a valuable innovation in the field.

Career Highlights

Dabiran is currently employed at Svt Associates, Inc., where he continues to develop cutting-edge technologies in high-energy particle detection. His work has positioned him as a key figure in the advancement of imaging systems that leverage high-energy particle interactions.

Collaborations

Throughout his career, Dabiran has collaborated with esteemed colleagues, including Andrei Vladimirovich Osinsky and Jianwei Dong. These collaborations have further enriched his research and development efforts in the field.

Conclusion

Amir Massoud Dabiran's contributions to high-energy particle sensing and imaging technologies underscore his role as an influential inventor. His innovative patents reflect a commitment to advancing scientific understanding and technological capabilities in this critical area.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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